? 2003 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v gs continuous 20 v i d25 t c = 25 c; note 1 94 a i d100 t c = 100 c, note 1 60 a i d(rms) package lead current limit 45 a e as i o = 10a, t c = 25 c 1800 mj p d t c = 25 c 780 w t j -55 ... +150 c t jm 150 c t stg -55 ... +125 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c f c mounting force 11 ... 65 / 2.4 ...11 n/lb weight 3g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. r ds(on) v gs = 10 v, i d = i d100 , note 30 35 m ? v gs = 10 v, i d = i d100 , note t j = 125 c75m ? v gs(th) v ds = v gs , i d = 4 ma 2 3 4 v i dss v ds = v dss t j = 25 c50 a v gs = 0 v t j = 150 c 400 a i gss v gs = 20 v dc , v ds = 0 200 na g = gate d = drain s = source ds99065b(08/03) advance technical information power mosfet low r ds(on) , high voltage, superjunction mosfet ixkk 94n60c3 v dss = 600 v i d25 = 94 a r ds(on) = 35 m ? ? ? ? ? features z 3 rd generation superjunction power mosfet - high blocking capability - low on resistance - avalanche rated for unclamped inductive switching (uis) z low thermal resistance due to reduced chip thickness applications z switched mode power supplies (smps) z uninterruptible power supplies (ups) z power factor correction (pfc) z welding z inductive heating s g d (tab) to-264
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v, i d = i d100 75 s q g(on) 500 625 nc q gs v gs = 10 v, v ds = 350 v, i d = 40 a 48 nc q gd 240 nc t d(on) 20 ns t r v gs = 10 v, v ds = 380v 27 ns t d(off) i d = 60 a, r g = 2.2 ? 14 ns t f 10 ns r thjc 0.16 k/w r thch 0.15 k/w reverse correction characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v sd i f = i d100 , v gs = 0 v 1.0 1.2 v note 1 note: 1. pulse test, t 100 300 s, duty cycle d 2 % ixkk 94n60c3 to-264 outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim.
? 2003 ixys all rights reserved ixkk 94n60c3 fig. 2. extended output characteristics @ 25 deg. c 0 40 80 120 160 200 240 280 320 360 0 2 4 6 8 1012141618 v d s - volts i d - amperes v gs = 10v 7v 5v 6v t p = 300s fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 70 80 90 100 01 2345 67 v d s - volts i d - amperes v gs = 10v 5v 4v 4.5v t p = 300s fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 v d s - volts i d - amperes v gs = 10v 6v 5v 4v 4.5v t p = 300s fig. 4. r ds(on) norm alized to i d100 v alue vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s (on) - normalize d i d = 60a i d = 30a v gs = 10v t p = 300s fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 100 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to i d100 value vs. i d 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 4 0 40 80 120 160 200 240 280 320 360 i d - amperes r d s (on) - normalize d t j = 125oc t j = 25oc v gs = 10v t p = 300s
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 ixkk 94n60c3 fig. 11. capacitance 10 100 1000 10000 100000 0 10 203040 50607080 90100 v ds - volts capacitance - pf c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 60 120 180 240 300 360 420 480 540 q g - nanocoulombs v g s - volts v ds = 350v i d = 80a i g = 10ma fig. 7. input admittance 0 30 60 90 120 150 180 210 240 22.5 33.5 44.5 55.5 6 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 12. maxim um transient therm al resistance 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w) fig. 8. transconductance 0 20 40 60 80 100 120 140 160 180 0 30 60 90 120 150 180 210 240 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to- drain voltage 0 20 40 60 80 100 120 140 160 180 200 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v s d - volts i s - amperes t j = 125oc t j = 25oc
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